Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 16.7 W IC Device Current* 0.82 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM812...
AM81214-006: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 16.7 W IC Device Current* 0.82 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperatu...
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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 37.5 ...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 63 W ...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC100°C) 107 W ...
Symbol | Parameter | Value | Unit |
PDISS | Power Dissipation* (TC 100°C) | 16.7 | W |
IC | Device Current* | 0.82 | A |
VCC | Collector-Supply Voltage* | 32 | V |
TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
TSTG | Storage Temperature | - 65 to +200 | °C |
The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.
AM81214-006 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire
bonding techniques ensure high reliability and product consistency.
AM81214-006 is supplied in the grounded IMPACTM Hermetic Metal/Ceramic package with internal input/output matching structures.