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AM81214-006

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 16.7 W IC Device Current* 0.82 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM812...

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AM81214-006: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 16.7 W IC Device Current* 0.82 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperatu...

AM81214-006 Data Sheet

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Part Number:
AM81214-006
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC  100°C) 16.7 W
IC Device Current* 0.82 A
VCC Collector-Supply Voltage* 32 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

AM81214-006 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire
bonding techniques ensure high reliability and product consistency.

AM81214-006 is supplied in the grounded IMPACTM Hermetic Metal/Ceramic package with internal input/output matching structures.




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