AM81719-040

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation*	79.5	W
IC	Device Current*	4.8	A
VCC	Collector-Supply Voltage*	30	V
TJ	Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency.