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AM81719-030

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* 67.3 W IC Device Current* 2.67 A VCC Collector-Supply Voltage* 28 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM81719-030 is a high power silicon NP...

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AM81719-030: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* 67.3 W IC Device Current* 2.67 A VCC Collector-Supply Voltage* 28 V TJ Junction Temperature 200 °C...

AM81719-030 Data Sheet

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Part Number:
AM81719-030
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* 67.3 W
IC Device Current* 2.67 A
VCC Collector-Supply Voltage* 28 V
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding
is employed to ensure long term reliability and product consistency.

AM81719-030 is supplied in the industry-standard AMPACTM hermetic metal/ceramic package.


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