AM28F256A-200JC

Features: High performance- Access times as fast as 70 nsCMOS low power consumption- 30 mA maximum active current- 100 µA maximum standby current- No data retention power consumption Compatible with JEDEC-standard byte-wide32-Pin EPROM pinouts- 32-pin PDIP- 32-pin PLCC- 32-pin TSOP 100,000 w...

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SeekIC No. : 004282182 Detail

AM28F256A-200JC: Features: High performance- Access times as fast as 70 nsCMOS low power consumption- 30 mA maximum active current- 100 µA maximum standby current- No data retention power consumption Compatibl...

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Part Number:
AM28F256A-200JC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

 High performance
- Access times as fast as 70 ns
CMOS low power consumption
- 30 mA maximum active current
- 100 µA maximum standby current
- No data retention power consumption
Compatible with JEDEC-standard byte-wide32-Pin EPROM pinouts
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP
100,000 write/erase cycles minimum
nWrite and erase voltage 12.0 V ±5%
Latch-up protected to 100 mA from 1 V toVCC +1 V
Embedded Erase Electrical Bulk Chip-Erase
- 1.5 seconds typical chip-erase includingpre-programming
Embedded Program
- 14 µs typical byte-program including time-ou
- 0.5 second typical chip program
Command register architecture formicroprocessor/microcontroller compatiblewrite interface
On-chip address and data latches
Advanced CMOS flash memory technology
- Low cost single transistor memory cell
Embedded algorithms for completelyself-timed write/erase operations



Pinout

  Connection Diagram


Specifications

Storage Temperature . . . . . . . . . . . 65 to +150
Plastic Packages . . . . . . . . . . . . . . . 65 to +125
Ambient Temperature
with Power Applied. . . . . . . . . . . . . 55 to + 125
Voltage with Respect To Ground
All pins except A9 and VPP
(Note 1)  . . . . . . . . . . . . . . . . . . . . . 2.0 V to +7.0 V
VCC
(Note 1). . . . . . . . . . . . . . . . . . . . . . 2.0 V to +7.0 V
A9 (Note 2). . . . . . . . . . . . . . . . . . .2.0 V to +14.0 V
VPP (Note 2). . . . . . . . . . . . . . . . . .2.0 V to +14.0 V
Output Short Circuit Current (Note 3)  . . . . .   200 mA



Description

The AM28F256A-200JC is a 256 K Flash memory organizedas 32 Kbytes of 8 bits each. AMD's Flash memoriesoffer the most cost-effective and reliable read/writenon- volatile random access memory. The AM28F256A-200JC is packaged in 32-pin PDIP, PLCC, and TSOP versions.It is designed to be reprogrammed and erased in-systemor in standard EPROM programmers. TheAm28F256A is erased when shipped from the factory.The standard Am28F256A offers access times as fastas 70 ns, allowing operation of high-speed microprocessorswithout wait states. To eliminate bus contention,the Am28F256A has separate chip enable (CE#)and output enable (OE#) controls.

AMD's Flash memories augment EPROM functionalitywith in-circuit electrical erasure and programming. The AM28F256A-200JC uses a command register to manage thisfunctionality, while maintaining a standard JEDECFlash Standard 32-pin pinout. The command registerallows for 100% TTL level control inputs and fixedpower supply levels during erase and programming.AMD's Flash technology reliably stores memory contentseven after 100,000 erase and program cycles.The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combinationof advanced tunnel oxide processing and low internalelectric fields for erase and programmingoperations produces reliable cycling. The AM28F256A-200JC uses a 12.0V±5% VPP high voltage input to performthe erase and programming functions.The highest degree of latch-up protection is achievedwith AMD's proprietary non-epi process. Latch-upprotectionis provided for stresses up to 100 milliamps onaddress and data pins from 1 V to VCC +1 V.




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