AM28F010-120JC

The AM28F010-120JC is designed as one kind of 1M Kilobit (128 K x 8-Bit) CMOS 12.0 Volt, bulk erase flash memory that offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. And this device is byte programmable using 10 ms programming pulses in accordance with AMD's Flashrite programming algorithm.

Features of the AM28F010-120JC are:(1)Automatic write/erase pulse stop timer;(2)Advanced CMOS flash memory technology: Low cost single transistor memory cell;(3)On-chip address and data latches;(4)Command register architecture for microprocessor / microcontroller compatible write interface;(5)Flashrite Programming: 10 s typical byte-program and One second typical chip program;(6)Flasherase Electrical Bulk Chip-Erase: One second typical chip-erase;(7)Write and erase voltage 12.0 V ±5%;(8)10,000 write/erase cycles minimum;(9)High performance - 70 ns maximum access time.

The absolute maximum ratings of the AM28F010-120JC can be summarized as:(1)Storage Temperature Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied:65°C to +125°C;(3)Voltage with Respect to Ground VCC: -2.0 V to +7.0 V.etc;(4)Output Short Circuit Current: 200 mA. If you want to know more information about the AM28F010-120JC, please download the datasheet in www.seekic.com or www.chinaicmart.com .