Features: 1 High performance
- Access times as fast as 70 ns
2 CMOS low power consumption
- 30 mA maximum active current
- 100 A maximum standby current
- No data retention power consumption
3 Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP
4 100,000 write/erase cycles minimum
5 Write and erase voltage 12.0 V ±5%
6 Latch-up protected to 100 mA from
1 V to VCC +1 V
7 Embedded Erase Electrical Bulk Chip Erase
- 5 seconds typical chip erase, including
8pre-programming
9 Embedded Program
- 14 s typical byte program, including time-out
- 4 seconds typical chip program
10 Command register architecture for microprocessor/microcontroller compatible write interface
11 On-chip address and data latches
12Advanced CMOS flash memory technology
- Low cost single transistor memory cell
13 Embedded algorithms for completely self-timed write/erase operationsPinout
Specifications
| Family Part Number |
Am28F010A |
| Speed Options (VCC = 5.0 V ± 10%) |
-70 |
-90 |
-120 |
-150 |
-200 |
| Max Access Time (ns) |
70 |
90 |
120 |
150 |
200 |
| CE# (E#) Access (ns) |
70 |
90 |
120 |
150 |
200 |
| OE# (G#) Access (ns) |
35 |
35 |
50 |
55 |
55 |
DescriptionThe AM28F010A-200JC is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD's Flash memories offer the most cost-effective and reliable ad/write non-volatile random access memory.
The AM28F010A-200JC is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010A is erased when shipped from the factory.The standard Am28F010A offers access times of as fast as 70 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#) and output enable (OE#) controls. AMD's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.
The AM28F010A-200JC uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.
The AM28F010A-200JC is compatible with the AMD Am28F256A, Am28F512A, and Am28F020A Flash memories. All devices in the Am28Fxxx family follow the JEDEC 32-pin pinout standard. In addition, all devices within this family that offer Embedded Algorithms use the same command set. This offers designers the flexibility to retain the same device footprint and command set, at any density between 256 Kbits and 2 Mbits. AMD's Flash technology reliably stores memory contents even after 100,000 erase and program cycles.
The AMD cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The Am28F010A uses a 12.0±5% VPP input to perform the erase and programming functions.
The highest degree of latch-up protection is achieved with AMD's proprietary non-epi process. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC +1 V. AMD's Flash technology combines years of EPROM and EEPROM experience to produce the highest levels of
quality, reliability, and cost effectiveness.
The Am28F010A electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.
AM28F010A-200JC Data Sheet
