AM1214-325 Selling Leads, Price trend, AM1214-325 DataSheet download, circuit diagram from SeekIC.com

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1250 W IC Device Current* 25 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM1214-...

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AM1214-325: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1250 W IC Device Current* 25 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature...

AM1214-325 Data Sheet

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Part Number:: AM1214-325
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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AM1214-100 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 270 W...
AM1214-130 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 85°C)* TBD W...
AM1214-175 evaluate
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 330 W...

Product Details

Description

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (TC 100°C)	1250	W
I_C	Device Current*	25	A
V_CC	Collector-Supply Voltage*	45	V
T_J	Junction Temperature (Pulsed RF Operation)	250	°C
T_STG	Storage Temperature	- 65 to +200	°C

Description

The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

AM1214-325 is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1214-325 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.

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