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AM1214-325

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1250 W IC Device Current* 25 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM1214-...

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AM1214-325: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1250 W IC Device Current* 25 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature...

AM1214-325 Data Sheet

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Part Number:
AM1214-325
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC 100°C) 1250 W
IC Device Current* 25 A
VCC Collector-Supply Voltage* 45 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

AM1214-325 is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1214-325 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.




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