AM1214-175

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 100°C)	330	W
IC	Device Current*	14	A
VCC	Collector-Supply Voltage*	45	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.

AM1214-175 is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1214-175 is supplied in the BIGPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.