AM1214-200

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	575	W
IC	Device Current*	16	A
VCC	Collector-Supply Voltage*	40	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.

AM1214-200 is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

AM1214-200 is supplied in the BIGPAC] hermetic metal/ceramic package with internal input/output matching structures.