AM1214-100

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	270	W
IC	Device Current*	13.5	A
VCC	Collector-Supply Voltage*	32	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

AM1214-100 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures.