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AM1214-250

Transistors Bipolar (BJT)

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SeekIC No. : 00214718 Detail

AM1214-250: Transistors Bipolar (BJT)

AM1214-250 Data Sheet

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Part Number:
AM1214-250
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 70 V
Emitter- Base Voltage VEBO : 3.5 V Maximum DC Collector Current : 21 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single Dual Base
Maximum Operating Frequency : 1400 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Case M259
Packaging : Tube    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
DC Collector/Base Gain hfe Min : 10
Collector- Emitter Voltage VCEO Max : 70 V
Emitter- Base Voltage VEBO : 3.5 V
Maximum DC Collector Current : 21 A
Maximum Operating Frequency : 1400 MHz
Configuration : Single Dual Base
Package / Case : Case M259


Features:

• REFRACTORY /GOLD METALLIZATION
• EMITTER SITE BALLASTING
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• POUT = 300 W MIN. WITH 8.0 dB GAIN
• 1215-1400 MHz OPERATION




Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation (TC £ 85°C)* 786 W
IC Device Current* 21 A
VCBO Collector-Base Voltage 70 V
Tj Operating Junction Temperature +250 °C
TSTG Storage Temperature -65 to +200 °C



Description

The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry.


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