AM1214-250

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
DC Collector/Base Gain hfe Min : 10
Collector- Emitter Voltage VCEO Max : 70 V
Emitter- Base Voltage VEBO : 3.5 V
Maximum DC Collector Current : 21 A
Maximum Operating Frequency : 1400 MHz
Configuration : Single Dual Base
Package / Case : Case M259


Features:

• REFRACTORY /GOLD METALLIZATION
• EMITTER SITE BALLASTING
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 300 W MIN. WITH 8.0 dB GAIN
• 1215-1400 MHz OPERATION

Pinout




Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation (TC £ 85°C)*	786	W
IC	Device Current*	21	A
VCBO	Collector-Base Voltage	70	V
Tj	Operating Junction Temperature	+250	°C
TSTG	Storage Temperature	-65 to +200	°C

Description

The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry.