Features: Low Conversion Loss, 9 dBLow LO Power Requirement, 8 dBmImage Rejection, 18 dBNo DC Bias RequiredRequires External IF 90° HybridSpecificationsCharacteristic ValueOperating Temperature -55°C to +125°CStorage Temperature -65°C to +150°CTotal Input Power (RF + LO) 23 dBmDescriptionAlpha's i...
AM038R1-00: Features: Low Conversion Loss, 9 dBLow LO Power Requirement, 8 dBmImage Rejection, 18 dBNo DC Bias RequiredRequires External IF 90° HybridSpecificationsCharacteristic ValueOperating Temperature -55°...
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Features: Low Conversion Loss, 6.0 dBLow LO Power Requirement, 9 dBmHigh LO to RF Isolation, 28 dB...
Features: Low Conversion Loss, 6.0 dBLow LO Power Requirement, 9 dBmHigh LO to RF Isolation, 28 dB...
Features: Low Conversion Loss, 6.5 dBInsensitive to LO Power VariationsLow LO Power Requirement, 9...
Alpha's image rejection balanced GaAs Schottky diode mixer has a typical conversion loss of 9 dB at an LO power level as low as 8 dBm over the band 3343 GHz. An external 90° IF hybrid is required to combine the IF1 and IF2 signals at the desired IF frequency. AM038R1-00 uses Alpha's proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. AM038R1-00 employs surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. This device is recommended for applications requiring down conversion.