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AM035N4-00

Features: Low Conversion Loss, 6.0 dBLow LO Power Requirement, 9 dBmHigh LO to RF Isolation, 28 dBNo DC Bias RequiredSpecificationsCharacteristic ValueOperating Temperature -55°C to +125°CStorage Temperature -65°C to +150°CTotal Input Power (RF + LO) 20 dBmDescriptionAlpha's ring hybrid GaAs Schot...

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AM035N4-00: Features: Low Conversion Loss, 6.0 dBLow LO Power Requirement, 9 dBmHigh LO to RF Isolation, 28 dBNo DC Bias RequiredSpecificationsCharacteristic ValueOperating Temperature -55°C to +125°CStorage Te...

AM035N4-00 Data Sheet

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Part Number:
AM035N4-00
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

Low Conversion Loss, 6.0 dB
Low LO Power Requirement, 9 dBm
High LO to RF Isolation, 28 dB
No DC Bias Required


Specifications

Characteristic                                          Value
Operating Temperature                     -55°C to +125°C
Storage Temperature                        -65°C to +150°C
Total Input Power (RF + LO)                  20 dBm


Description

Alpha's ring hybrid GaAs Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 3237 GHz. AM035N4-00 uses Alpha's proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. AM035N4-00 is screened for DC diode parameters and lot samples are RF measured to guarantee performance.




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