AM035N5-00

Features:

Low Conversion Loss, 6.0 dB
Low LO Power Requirement, 9 dBm
High LO to RF Isolation, 28 dB
No DC Bias Required


Specifications

Characteristic                                                     Value
Operating Temperature                                 -55°C to +125°C
Storage Temperature                                    -65°C to +150°C
Total Input Power (RF + LO)                            20 dBm


Description

Alpha's ring hybrid GaAs Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 3237 GHz. The chip uses Alpha's proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. AM035N5-00 employs surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. AM035N5-00 is screened for DC diode parameters and lot samples are RF measured to guarantee performance.