Features: - Low Gate Charge- Single Drive Requirement- Surface Mount Package- Pb Free Plating ProductPinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current, VGS=10V TC=25 11 A TC=100 ...
AF4978N: Features: - Low Gate Charge- Single Drive Requirement- Surface Mount Package- Pb Free Plating ProductPinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V ...
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Symbol | Parameter | Rating | Units | |
VDS | Drain-Source Voltage | 60 | V | |
VGS | Gate-Source Voltage | ±25 | V | |
ID | Continuous Drain Current, VGS=10V | TC=25 | 11 | A |
TC=100 | 6.8 | |||
IDM | Pulsed Drain Current (Note 1) | 45 | A | |
PD | Total Power Dissipation | TC=25 | 24 | W/ |
Linear Derating Factor | 0.17 | |||
TSTG | Storage Temperature Range | -55 to 150 | ||
TJ | Operating Junction Temperature Range | -55 to 150 |
The AF4978N advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.