Features: · Low On-resistance· Simple Drive Requirement· Dual N MOSFET PackagePinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current (Note 1) TA=25 8.2 A TA=70 6.7 ...
AF4920N: Features: · Low On-resistance· Simple Drive Requirement· Dual N MOSFET PackagePinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Sour...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
Rating |
Units | |
VDS | Drain-Source Voltage |
30 |
V | |
VGS | Gate-Source Voltage |
±20 |
V | |
ID | Continuous Drain Current (Note 1) | TA=25 |
8.2 |
A |
TA=70 |
6.7 | |||
IDM | Pulsed Drain Current (Note 2) |
30 |
A | |
PD | Total Power Dissipation | TA=2 |
2 |
W |
Linear Derating Factor |
0.016 |
W/ | ||
TSTG | Storage Temperature Range |
-55 to 150 |
||
TJ | Operating Junction Temperature Range |
-55 to 150 |
The AF4920N advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.