Features: -Low rDS(on) Provides Higher Efficiency and Extends Battery Life-Miniature SO-8 Surface Mount Package Saves Board Space-High power and current handling capability-Extended VGS range (±25) for battery pack applicationsPinoutSpecifications Symbol Parameter Rating Units VDS Drai...
AF4935P: Features: -Low rDS(on) Provides Higher Efficiency and Extends Battery Life-Miniature SO-8 Surface Mount Package Saves Board Space-High power and current handling capability-Extended VGS range (±25) ...
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Symbol | Parameter | Rating | Units | |
VDS | Drain-Source Voltage | -30 | V | |
VGS | Gate-Source Voltage | ±20 | V | |
ID | Continuous Drain Current (Note 1) | TA=25ºC | -8.0 | A |
TA=70ºC | -7.2 | |||
IDM | Pulsed Drain Current (Note 2) | ±30 | A | |
IS | Continuous Source Current (Diode Conduction) (Note 1) | -2.1 | A | |
PD | Power Dissipation (Note 1) | TA=25ºC | 2.0 | W |
TA=70ºC | 1.3 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | ºC |
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making AF4935P ideal for use in power management circuitry. Typical applications of AF4935P are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.