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ACT-SF512K32

Features: . 4 512K x 8 SRAMs & 4 512K x 8 Flash Die in One MCM. Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash). Organized as 512K x 32 of SRAM and 512K x 32of Flash Memory with Common Data Bus . Low Power CMOS. Input and Output TTL Compatible Design. MIL-PRF-38534 Compliant M...

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SeekIC No. : 004268151 Detail

ACT-SF512K32: Features: . 4 512K x 8 SRAMs & 4 512K x 8 Flash Die in One MCM. Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash). Organized as 512K x 32 of SRAM and 512K x 32of Flash Memory with...

ACT-SF512K32 Data Sheet

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Part Number:
ACT-SF512K32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

. 4 512K x 8 SRAMs & 4 512K x 8 Flash Die in One MCM
. Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)
. Organized as 512K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus
. Low Power CMOS
. Input and Output TTL Compatible Design
. MIL-PRF-38534 Compliant MCMs Available
. Decoupling Capacitors and Multiple Grounds for Low Noise
. Commercial, Industrial and Military Temperature Ranges
. Industry Standard Pinouts
. TTL Compatible Inputs and Outputs
. Packaging Hermetic Ceramic 
  66Lead, PGA-Type, 1.385"SQ x 0.245"max, 
  Aeroflex code# "P1,P5 with/without shoulders)"
  68Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
  .20"max (.18 max thickness available, contact
  factory for details) (Drops into the 68 Lead
  JEDEC .99"SQ CQFJ footprint)
  FLASH MEMORY FEATURES
. Sector Architecture (Each Die)
  8 Equal Sectors of 64K bytes  each
  Any combination of sectors can be erased with one 
. +5V Programing, +5V Supply
. Embedded Erase and Program Algorithms
. Hardware and Software Write Protection
. Page Program Operation and Internal Program Control Time.
. 10,000 Erase/Program Cycles


Specifications

Symbol

Rating

Range

Units

TC

Operating Temperature

-55 to +125

°C

TSTG

Storage Temperature

-65 to +150

°C

VG

Maximum Signal Voltage to Ground

-0.5 to +7

V

TL

Maximum Lead Temperature (10 seconds)

300

°C




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