Features: 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCMUser Configureable as 2 Independent 512K X 48 X 2 BanksHigh-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface3.3-V Power Supply (±10% Tolerance)Separate Logic and Output Driver Power PinsTwo Banks for...
ACT-D1M96S: Features: 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCMUser Configureable as 2 Independent 512K X 48 X 2 BanksHigh-Speed, Low-Noise, Low-Voltage TTL (LVTTL) ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ` 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package` Overall Configuration is ...
Features: `4 Low Power 128K x 8 FLASH Die in One MCM Package`Organized as 128K x 32`User Configura...
Symbol |
Rating |
Range |
Units |
VCC |
Supply Voltage |
-0.5 to 4.6 |
V |
VCCQ |
Supply Voltage range for output drivers |
-0.5 to 4.6 |
V |
VRANGE |
Voltage range on any pin with respect to VSS |
-0.5 to 4.6 |
V |
TBIAS |
Case Temperature under Bias2 |
-55 to +125 |
°C |
TSTG |
Storage Temperature |
-65 to +150 |
°C |
ISHORT |
Short-Circuit Output Current |
50 |
mA |
PW |
Power Dissipation |
4.2 |
W |
The ACT-D1M96S device is a high-speed 96Mbit synchronous dynamic random access memory (SDRAM) organized as 2 independent 512K X 48 X 2 banks. All inputs and outputs of the ACT-D1M96S are compatible with the LVTTL interface. All inputs and outputs are synchronized with the CLK input to simplify system design and enhance use with high-speed microprocessors and caches.