ACT-D2M32A-090F18I

`  4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package
`  Overall Configuration is 2M x 32
`  +5V Power Supply / +5V Programing Operation
`  Access Times of 90, 120 and 150 ns
`  Erase/Program Cycles 100,000 Minimum
`  Sector erase architecture (Each Die)
`  32 uniform sectors of 64 Kbytes each
`  Any combination of sectors can be erased. Also supports full chip erase
`  Sector group protection is user definable
`  Embedded Erase Algorithims Automatically pre-programs and erases the die or any sector
`  Embedded Program Algorithims Automatically programs and verifies data at specified address
`  Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
`  Hardware RESET pin Resets internal state machine to the read mode
`  Erase Suspend/Resume Supports reading or programming data to a sector not being erased
`  Packaging Hermetic Ceramic
`  68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
`  Internal Decoupling Capacitors for Low Noise Operation
`  Commercial, Industrial and Military Temperature Ranges
`  MIL-PRF-38534 Compliant MCMs Available

Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on input/output pins is VCC + 0.5V, which may overshoot to V_CC + 2.0V for periods up to 20ns.

2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may vershoot GND to -2.0V for periods up to 20ns.

Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns.

3. No more than one output shorted to ground for no more than 1 second.

NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the evice. These are stress rating only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.

Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications.

The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).

The command register ACT-F2M32A is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 90ns, 120ns and 150ns maximum are standard.