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ACT-SF41632N-26P1I

Features: ·4 -C 128K x 8 SRAMs & 4-C 512K x 8 Flash Die in One MCM ·Access Times of 25ns, 35ns (SRAM) and60ns, 70ns, 90ns (Flash) ·Organized as 128K x 32 of SRAM and 512K x 32 ·of Flash Memory with Common Data Bus ·Low Power CMOS ·Input and Output TTL Compatible Design ·MIL-PRF-38534 Compliant...

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SeekIC No. : 004268149 Detail

ACT-SF41632N-26P1I: Features: ·4 -C 128K x 8 SRAMs & 4-C 512K x 8 Flash Die in One MCM ·Access Times of 25ns, 35ns (SRAM) and60ns, 70ns, 90ns (Flash) ·Organized as 128K x 32 of SRAM and 512K x 32 ·of Flash Memory w...

ACT-SF41632N-26P1I Data Sheet

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Part Number:
ACT-SF41632N-26P1I
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

·4 -C 128K x 8 SRAMs & 4-C 512K x 8 Flash Die in One MCM
·Access Times of 25ns, 35ns (SRAM) and  60ns, 70ns, 90ns (Flash)
·Organized as 128K x 32 of SRAM and 512K x 32
·of Flash Memory with Common Data Bus
·Low Power CMOS
·Input and Output TTL Compatible Design
·MIL-PRF-38534 Compliant MCMs Available
·Decoupling Capacitors and Multiple Grounds for Low Noise 
·Commercial, Industrial and Military Temperature Ranges 
·Industry Standard Pinouts
·TTL Compatible Inputs and Outputs 
·Packaging - Hermetic Ceramic 
· Sector Architecture (Each Die)
·8 Equal Sectors of 64K bytes  each
·Any combination of sectors can be erased with  one command sequence. 
·+5V Programing, +5V Supply
·Embedded Erase and Program Algorithms
·Hardware and Software Write Protection
·Page Program Operation and Internal Program Control Time. 
· 10,000 Erase/Program Cycles


Specifications

Symbol Rating Range Units
TC
 Case Operating Temperature -55 to +125
TSTG
 Storage Temperature -65 to +150
VG
 Maximum Signal Voltage to Ground -0.5 to +7 V

TL

 Maximum Lead Temperature (10 seconds) 300
Parameter  
Flash Data Retention 10 Years
Flash Endurance (Write/Erase Cycles) 10,000



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