ACT-SF128K32

. 4 128K x 8 SRAMs & 4 128K x 8 Flash Die in One MCM
. Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70ns or 90ns (Flash)
. Organized as 128K x 32 of SRAM and 128K x 32 of Flash Memory with Common Data Bus
. Low Power CMOS
. Input and Output TTL Compatible Design
. MIL-PRF-38534 Compliant MCMs Available
. Decoupling Capacitors and Multiple  Grounds for Low Noise
. Commercial, Industrial and Military Temperature Ranges
. Industry Standard Pinouts
. TTL Compatible Inputs and Outputs
. Packaging Hermetic Ceramic
  66Lead, PGA-Type, 1.385"SQ x 0.245"max, 
  Aeroflex code# P3,P7 without/with shoulders
  FLASH MEMORY FEATURES
. Sector Architecture (Each Die)
  8 Equal Sectors of 16K bytes  each
  Any combination of sectors can be erased with
  one command sequence.
. +5V Programing, +5V Supply
. Embedded Erase and Program Algorithms
. Hardware and Software Write Protection
. Page Program Operation and Internal
  Program Control Time.
. 10,000 Erase/Program Cycles