ACT-S4M32C-100F1T

Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications.

The ACT-F4M32A consists of eight high-performance AMD  Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). The command register is written by bringing WE to a logic low level (V_IL), while CE  is low and  OE is high  (V_IH). Reading is accomplished by chip Enable (CE ) and Output Enable ( OE) being logically active. Access time grades of  100ns, 120ns and 150ns maximum are standard.       

The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 lead ceramic packages. This allows operation in a military environment temperature range of -55°C to +125°C.   

The ACT-F4M32A can be programmed (both read and write functions) in-system using the +5.0V V_CC power supply.  A 12.0V V_PP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY  pin,  Data Polling of DQ7, or by the Toggle bit (DQ6).

The ACT-F4M32A also has a hardware  RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated.

Each block of ACT-F4M32A can be independently erased and programmed 100,000 times at +25°C.