Features: Low Power Monolithic CMOS 512K x 8 SRAMOperating Temperature Range Full Military (-55°C to +125°C) Industrial (-40°C to +85°C)Burn-in and Temperature Cycle Available10, 12, 15, 17, 20 & 25ns Access Times+5V Power Supply Industry Standard Pinouts Center Power / Ground PinsTTL Compatib...
ACT-PS512K8: Features: Low Power Monolithic CMOS 512K x 8 SRAMOperating Temperature Range Full Military (-55°C to +125°C) Industrial (-40°C to +85°C)Burn-in and Temperature Cycle Available10, 12, 15, 17, 20 &...
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Features: 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCMUser...
Features: ` 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package` Overall Configuration is ...
Symbol |
Parameter |
MINIMUM |
MAXIMUM |
Units |
TC |
Case Operating Temperature |
-55 |
+125 |
°C |
TSTG |
Storage Temperature |
-65 |
+150 |
°C |
PD |
Maximum Package Power Dissipation |
|
1.0 |
W |
VG |
Maximum Signal Voltage to Ground |
-0.5 |
VCC + 0.5 |
V |
VCC |
Power Supply Voltage |
-0.5 |
+7.0 |
V |
The ACT-PS512K8 is a Plastic High Speed, 4 Megabit (4,194,304 bits) CMOS Monolithic SRAM organized as 524,288 words by 8 bits. Designed for high-speed, high density, high reliablility, mass memory and fast cache system applications.
The plastic monolithic ACT-PS512K8 is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low. Reading is accomplished when WE is high and CE and output enable (OE) are both low. Access time grades of 10ns 12ns, 15ns, 17ns, 20ns and 25ns are standard.