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AAT8543

Features: • VDS(MAX) = -20V• ID(MAX) 1 = -4.2A @ 25°C• Low RDS(ON):• 57 m @ VGS = -4.5V• 104 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipmentPinoutSpecifications Symbol Descriptio...

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SeekIC No. : 004261280 Detail

AAT8543: Features: • VDS(MAX) = -20V• ID(MAX) 1 = -4.2A @ 25°C• Low RDS(ON):• 57 m @ VGS = -4.5V• 104 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordl...

AAT8543 Data Sheet

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Part Number:
AAT8543
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• VDS(MAX) = -20V
• ID(MAX) 1 = -4.2A @ 25°C
• Low RDS(ON):
• 57 m @ VGS = -4.5V
• 104 m @ VGS = -2.5V






Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment




Pinout

Connection Diagram




Specifications

Symbol Description Value Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±4.2 A
TA = 70°C ±3.2
IDM
Pulsed Drain Current 2 ±20
IS Continuous Source Current (Source-Drain Diode) 1 -1.2
PD
 Maximum Power Dissipation 1 TA = 25°C 1.6 W
TA = 70°C 1.0
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C


  • VDS(MAX) = -20V
  • ID(MAX) 1 = -4.2A @ 25C
  • Low RDS(ON):
    • 57 m @ VGS = -4.5V
    • 104 m@ VGS = -2.5V





Description

The AAT8543 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package.






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