Features: • VDS(MAX) = -20V• ID(MAX)1 = -10A @ 25°C• Low RDS(ON):• 14 mΩ @ VGS = -4.5V• 24 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipment• Load SwitchesPinoutSpecif...
AAT8303: Features: • VDS(MAX) = -20V• ID(MAX)1 = -10A @ 25°C• Low RDS(ON):• 14 mΩ @ VGS = -4.5V• 24 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular ...
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Symbol | Description | Value | Units | |
VDS |
Drain-Source Voltage | -20 | V | |
VGS | Gate-Source Voltage | ±12 | ||
ID | Continuous Drain Current @ TJ=150 1 | TA = 25 | ±10 | A |
TA = 70 | ±8 | |||
IDM | Pulsed Drain Current 2 | ±48 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | -2.3 | ||
PD | Maximum Power Dissipation 1 | TA = 25 | 2.3 | W |
TA = 70 | 1.5 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 |
The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.