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AAT8307

Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.0A @ 25°C• Low RDS(ON):• 35 mΩ @ VGS = -4.5V• 60 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipment• Load SwitchesPinoutSpeci...

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SeekIC No. : 004261272 Detail

AAT8307: Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.0A @ 25°C• Low RDS(ON):• 35 mΩ @ VGS = -4.5V• 60 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular...

AAT8307 Data Sheet

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Part Number:
AAT8307
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• VDS(MAX) = -20V
• ID(MAX)
1 = -6.0A @ 25°C
• Low RDS(ON):
• 35 mΩ @ VGS = -4.5V
• 60 mΩ @ VGS = -2.5V




Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches




Pinout

Connection Diagram




Specifications

Symbol Description Value Units
VDS
 Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ=150 1 TA = 25 ±6.0 A
TA = 70

±4.8

IDM Pulsed Drain Current 2 ±32
IS Continuous Source Current (Source-Drain Diode) 1 -1.9
PD Maximum Power Dissipation 1 TA = 25 2.1 W
TA = 70 1.3
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150





Description

The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.






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