AAT8307 Selling Leads, Price trend, AAT8307 DataSheet download, circuit diagram from SeekIC.com

Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.0A @ 25°C• Low RDS(ON):• 35 mΩ @ VGS = -4.5V• 60 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipment• Load SwitchesPinoutSpeci...

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SeekIC No. : 004261272 Detail

AAT8307: Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.0A @ 25°C• Low RDS(ON):• 35 mΩ @ VGS = -4.5V• 60 mΩ @ VGS = -2.5VApplication• Battery Packs• Cellular...

AAT8307 Data Sheet

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Part Number:: AAT8307
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Recent History
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AAT8107 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.5A @ 25°C• Low RDS(ON):• 35 m @...
AAT8303 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -10A @ 25°C• Low RDS(ON):• 14 m...
AAT8308 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -4.5A @ 25°C• Low RDS(ON): • 60 m ...

Product Details

Description

Features:

• V_DS(MAX) = -20V
• I_D(MAX)1 = -6.0A @ 25°C
• Low R_DS(ON):
• 35 mΩ @ V_GS = -4.5V
• 60 mΩ @ V_GS= -2.5V

Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches

Pinout

Connection Diagram

Specifications

Symbol	Description		Value	Units
V_DS	Drain-Source Voltage		-20	V
V_GS	Gate-Source Voltage		±12
I_D	Continuous Drain Current @ T_J=150 ¹	T_A = 25	±6.0	A
		T_A= 70	±4.8
I_DM	Pulsed Drain Current ²		±32
I_S	Continuous Source Current (Source-Drain Diode) ¹		-1.9
P_D	Maximum Power Dissipation 1	T_A = 25	2.1	W
		T_A= 70	1.3
T_J, T_STG	Operating Junction and Storage Temperature Range		-55 to 150

Description

The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.

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AAT8307

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