Features: • VDS(MAX) = -20V• ID(MAX)1 = -4.5A @ 25°C• Low RDS(ON): • 60 m @ VGS = -4.5V • 110 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipment• Load SwitchesPinoutSpecifications ...
AAT8308: Features: • VDS(MAX) = -20V• ID(MAX)1 = -4.5A @ 25°C• Low RDS(ON): • 60 m @ VGS = -4.5V • 110 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cord...
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• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | -20 | V | |
VGS | Gate-Source Voltage | ±12 | ||
ID | Continuous Drain Current @ TJ=150°C 1 | TA = 25°C | ±4.5 | A |
TA = 70°C | ±3.6 | |||
IDM |
Pulsed Drain Current 2 | ±24 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | -1.3 | ||
PD |
Maximum Power Dissipation 1 | TA = 25°C | 2.0 | W |
TA = 70°C | 1.3 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
The AAT8308 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.