AAT8308

Features: • VDS(MAX) = -20V• ID(MAX)1 = -4.5A @ 25°C• Low RDS(ON): • 60 m @ VGS = -4.5V • 110 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipment• Load SwitchesPinoutSpecifications ...

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AAT8308 Picture
SeekIC No. : 004261273 Detail

AAT8308: Features: • VDS(MAX) = -20V• ID(MAX)1 = -4.5A @ 25°C• Low RDS(ON): • 60 m @ VGS = -4.5V • 110 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cord...

floor Price/Ceiling Price

Part Number:
AAT8308
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/8/14

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Product Details

Description



Features:

• VDS(MAX) = -20V
• ID(MAX)1 = -4.5A @ 25°C
• Low RDS(ON):
    • 60 m @ VGS = -4.5V
    • 110 m @ VGS = -2.5V



Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches




Pinout

  Connection Diagram


Specifications

Symbol Description Value Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±4.5 A
TA = 70°C ±3.6
IDM
Pulsed Drain Current 2 ±24
IS Continuous Source Current (Source-Drain Diode) 1 -1.3
PD
Maximum Power Dissipation 1 TA = 25°C 2.0 W
TA = 70°C 1.3
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C



Description

The AAT8308 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package.




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