Features: • VDS(MAX) = -20V• ID(MAX) 1 = -3.0A @ 25°C• Low RDS(ON): • 100 m @ VGS = -4.5V • 175 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipmentPinoutSpecifications Symbol Descrip...
AAT8541: Features: • VDS(MAX) = -20V• ID(MAX) 1 = -3.0A @ 25°C• Low RDS(ON): • 100 m @ VGS = -4.5V • 175 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Co...
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Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | -20 | V | |
VGS | Gate-Source Voltage | ±12 | ||
ID | Continuous Drain Current @ TJ=150°C 1 | TA = 25°C | ±3.0 | A |
TA = 70°C | ±2.4 | |||
IDM |
Pulsed Drain Current 2 | ±12 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | -1.1 | ||
PD |
Maximum Power Dissipation 1 | TA = 25°C | 1.5 | W |
TA = 70°C | 0.9 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
The AAT8541 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package.