AAT8512

Features: • VDS(MAX) = -28V• ID(MAX) 1 = -3.3A @ 25°C• Low RDS(ON): • 90 m @ VGS = -4.5V • 150 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipmentPinoutSpecifications Symbol Descript...

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AAT8512 Picture
SeekIC No. : 004261276 Detail

AAT8512: Features: • VDS(MAX) = -28V• ID(MAX) 1 = -3.3A @ 25°C• Low RDS(ON): • 90 m @ VGS = -4.5V • 150 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cor...

floor Price/Ceiling Price

Part Number:
AAT8512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

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Upload time: 2024/11/23

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Product Details

Description



Features:

• VDS(MAX) = -28V
• ID(MAX) 1 = -3.3A @ 25°C
• Low RDS(ON):
     • 90 m @ VGS = -4.5V
     • 150 m @ VGS = -2.5V




Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment




Pinout

  Connection Diagram


Specifications

Symbol Description Value Units
VDS Drain-Source Voltage -28 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±3.3 A
TA = 70°C ±2.6
IDM
Pulsed Drain Current 2 ±20
IS Continuous Source Current (Source-Drain Diode) 1 -0.9
PD
Maximum Power Dissipation 1 TA = 25°C 1.6 W
TA = 70°C 1.0
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C



Description

The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package.




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