AAT8512 Selling Leads, Price trend, AAT8512 DataSheet download, circuit diagram from SeekIC.com

Features: • VDS(MAX) = -28V• ID(MAX) 1 = -3.3A @ 25°C• Low RDS(ON): • 90 m @ VGS = -4.5V • 150 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipmentPinoutSpecifications Symbol Descript...

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SeekIC No. : 004261276 Detail

AAT8512: Features: • VDS(MAX) = -28V• ID(MAX) 1 = -3.3A @ 25°C• Low RDS(ON): • 90 m @ VGS = -4.5V • 150 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cor...

AAT8512 Data Sheet

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Part Number:: AAT8512
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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Recent History
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AAT8107 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.5A @ 25°C• Low RDS(ON):• 35 m @...
AAT8303 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -10A @ 25°C• Low RDS(ON):• 14 m...
AAT8307 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -6.0A @ 25°C• Low RDS(ON):• 35 m&#...

Product Details

Description

Features:

• V_DS(MAX) = -28V
• I_D(MAX) ¹= -3.3A @ 25°C
• Low R_DS(ON):
• 90 m @ V_GS = -4.5V
• 150 m @ V_GS = -2.5V

Application

• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment

Pinout

Connection Diagram

Specifications

Symbol	Description		Value	Units
V_DS	Drain-Source Voltage		-28	V
V_GS	Gate-Source Voltage		±12
I_D	Continuous Drain Current @ T_J=150°C ¹	T_A = 25°C	±3.3	A
		T_A= 70°C	±2.6
I_DM	Pulsed Drain Current ²		±20
I_S	Continuous Source Current (Source-Drain Diode) ¹		-0.9
P_D	Maximum Power Dissipation ¹	TA = 25°C	1.6	W
		TA = 70°C	1.0
T_J, T_STG	Operating Junction and Storage Temperature Range		-55 to 150	°C

Description

The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package.

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AAT8512

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