Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2 A P Channel: RDS(on) 0.9 W, VGS = 10 V, ID = 2 A * Low drive current* High speed switching* High density mounting* Suitable for H-bridged motor driverApplicationHigh speed power switchingSpecifications Item Symbol ...
4AM15: Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2 A P Channel: RDS(on) 0.9 W, VGS = 10 V, ID = 2 A * Low drive current* High speed switching* High density mounting* Suitable...
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Item |
Symbol |
Ratings |
Unit | |
Nch |
Pch | |||
Drain to source voltage |
VDSS |
200 |
-200 |
V |
Gate to source voltage |
VGSS |
±20 |
±20 |
V |
Drain current |
ID |
4 |
-4 |
A |
Drain peak current |
ID(pulse)*1 |
16 |
16 |
A |
Body to drain diode reverse drain current |
IDR |
4 |
-4 |
A |
Channel dissipation |
Pch(Tc = 25)*2 |
32 |
W | |
Channel dissipation |
Pch*2 |
4.0 |
W | |
Channel temperature |
Tch |
150 |
C | |
Storage temperature |
Tstg |
55 to +150 | <