Transistors Bipolar (BJT) High PWR NPN planar bipolar trans
2STC5949: Transistors Bipolar (BJT) High PWR NPN planar bipolar trans
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 17 A | ||
Configuration : | Single | Maximum Operating Frequency : | 25 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264 | Packaging : | Tube |
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-base voltage (IE = 0) | 250 | V |
VCEO | Collector-emitter voltage (IB = 0) | 250 | V |
VEBO | Emitter-base voltage (IC = 0) |
6 |
V |
IC | Collector current | 17 | A |
ICM | Collector peak current (tP < 5ms) | 34 | A |
PTOT | Total dissipation at Tc = 25 | 220 | W |
Tstg | Storage temperature | -65 to 150 | |
TJ | Max. operating junction temperature | 150 |
The 2STC5949 is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Technical/Catalog Information | 2STC5949 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Current - Collector (Ic) (Max) | 17A |
Power - Max | 220W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
Frequency - Transition | 25MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-264 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2STC5949 2STC5949 497 6959 5 ND 49769595ND 497-6959-5 |