2STC5200

Mounting Style :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 230 V
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 80
Package / Case : TO-264


Features:

· High breakdown voltage VCEO > 230V
· Complementary to 2STA1943
· Fast-switching speed
· Typical fT = 30 MHz


Application

·Audio power amplifier


Specifications

SYMBOL	PARAMETER	RATING	UNIT
VCBO	Collector to base voltage(IE = 0)	230	V
VCEO	Collector to emitter voltage(IB = 0)	230	V
VEBO	Emitter to base voltage(IC = 0)	5	V
IC	Collector current	15	A
ICM	Collector current (pulse)	30	A
Ptot	Total dissipation atTC = 25	150	W
Tj	Junction temperature	150
Tstg	Storage temperaturerange	-55 to +150

Description

This 2STC5200 is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2STC5200
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STC5200 2STC5200 497 7058 5 ND 49770585ND 497-7058-5