2STC4467

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 120 V
Package / Case : TO-3P
Maximum Operating Frequency : 20 MHz


Features:

`High breakdown voltage VCEO = 120 V
`Complementary to 2STA1694
`Fast-switching speed
`Typical ft = 20 MHz
`Fully characterized at 125


Application

Audio power amplifier


Specifications

SYMBOL	PARAMETER	Value	UNIT
VCBO	Collector-base voltage	120	V
VCEO	Collector-emitter voltage	120	V
VEBO	Emitter-base voltage	6	V
IC	Collector Current	8	A
ICM	Collector current-Pulse	16	A
PC	Collector Power Dissipation @Tc=25	80	W
Tj	Junction temperature	150
TSTG	Storage temperature	-65 to +150

Description

The 2STC4467 is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2STC4467
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	8A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Frequency - Transition	20MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STC4467 2STC4467 497 6957 5 ND 49769575ND 497-6957-5