2N5196

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Packaging : Bulk
Gate-Source Breakdown Voltage : - 50 V
Package / Case : TO-71
Drain Current (Idss at Vgs=0) : 0.7 mA to 7 mA


Features:

Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage:  5 pA
Low Noise
High CMRR:  100 dB


Application

Wideband Differential Amps
High-Speed, Temp-Compensated,Single-Ended Input Amps
High Speed Comparators
Impedance Converters


Pinout




Specifications

Gate-Drain, Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . .50 V
Gate Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 mA
Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . .300
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to 200
Operating Junction Temperature . . . . . . . . . . . . . . . . . . 55 to 150
Power Dissipation :Per Side^{a. . . . . . . . . . . . . . . . . . . . . . . .} 250 mW
                              Total^b. . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Description

The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features  tightly matched specs, low gate leakage for accuracy,and wide dynamic range with I_G guaranteed at V_DG = 20 V.

The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).