Transistors Bipolar (BJT) NPN Wide Bd AM
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V |
Emitter- Base Voltage VEBO : | 3 V | Maximum DC Collector Current : | 0.4 A |
DC Collector/Base Gain hfe Min : | 70 at 50 mA at 15 V | Configuration : | Single |
Maximum Operating Frequency : | 1200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-39 |
Packaging : | Box |
Symbol |
Parameter |
Value | Unit |
VCEO |
Collector-Emitter Voltage |
20 | Vdc |
VCBO |
Collector-Base Voltage |
40 | Vdc |
VEBO |
Emitter-Base Voltage |
3.0 | Vdc |
IC |
Collector Current |
400 | mA |
Silicon NPN transistor 2N5109, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.