Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 1009• Reference document:MIL-PRF-19500/453Application• General purpose• VHF-UHF amplifier transistor• NPN silicon transistorSpecifications Characterist...
2N5109UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 1009• Reference document:MIL-PRF-19500/453Application• General purpo...
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Characteristics | Symbol | Rating | Unit |
Collector-base voltage | VCBO | 20 | Volts |
Collector-emitter voltage | VCEO | 40 | Volts |
Emitter-base voltage | VEBO | 3 | Volts |
Collector current | IC | 400 | mA |
Power Dissipation, TA = 25 Derate linearly above 25 |
PT | 1 5.71 |
W mW/ |
Power Dissipation, TC = 25 Derate linearly above 25 |
PT | 2.9 16.6 |
W mW/ |
Thermal Resistance | RJA | 175 | /W |
Operating Junction Temperature | TJ | -65 to +200 | |
Storage Temperature | Tstg | -65 to +200 |