Transistors Bipolar (BJT) 4A 60V 40W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 4 A |
DC Collector/Base Gain hfe Min : | 25 | Configuration : | Single |
Maximum Operating Frequency : | 2 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-225 |
Packaging : | Bulk |
Rating |
Symbol |
2N5194 |
2N5195 |
Unit |
Collector-Emitter Voltage |
VCEO |
60 |
80 |
Vdc |
Collector-Base Voltage |
VCB |
60 |
80 |
Vdc |
Emitter-Base Voltage |
VEB |
5.0
|
Vdc | |
Collector Current |
LC |
4.0
|
Adc | |
Base Current |
LB |
1.0
|
Adc | |
Total Device Dissipation @ TC=25 Derate above 25 |
PD |
40
320 |
W W/ | |
Operating and Storage Junction |
TJ,Tstg |
-65 to +150
|
/W |
These devices 2N5194 are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192.