2N5172

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 25 V
DC Collector/Base Gain hfe Min : 100 at 10 mA at 10 V


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	25	V
VCBO	Collector-Base Voltage	25	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current - Continuous	500	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This 2N5172 is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.




Parameters:

Technical/Catalog Information	2N5172
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5172 2N5172