2N5116

JFET P-Ch Junc FET

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2N5116 Picture
SeekIC No. : 00144304 Detail

2N5116: JFET P-Ch Junc FET

floor Price/Ceiling Price

US $ 2.15~2.15 / Piece | Get Latest Price
Part Number:
2N5116
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $2.15
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Gate-Source Breakdown Voltage : 30 V
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-18    

Description

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Gate-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-18


Features:

· Low ON Resistance
· ID(off)<500pA
· Switches directly from TTL Logic





Specifications

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65 to +200
Operating Temperature Range . . . . . . . . . . . -55 to +200
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.






Description

2N5116 Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS).






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