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This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT.
ZCN0545A Maximum Ratings
PARAMETER
SYMBOL
VALUE
UNIT
Forward Drain-Source Voltage
VDS
450
V
Reverse Drain Source Voltage
VSD
30
V
Continuous Drain Current
ID
0.32
A
Practical Continuous Drain Current*
IDP
0.37
A
Pulsed Drain Current @ Tamb=25 @ Tamb=125
IDMR IDM
2 1
A A
Gate-Source Voltage
VGS
±20
V
Power Dissipation at Tamb=25
Ptot
0.6
W
Practical Power Dissipation*
PDP
0.8
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +125
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
ZCN0545A Features
* Extremely low on state voltage * No need to derate for higher temperatures * Excellent temperature immunity * High input impedance * Reverse blocking characteristic which is Independent of gate bias * Low input capacitance * Characterised for logic level drive
ZCN0545A Typical Application
* Fluorescent lamp driver * Automotive load drivers * High voltage DC-DC converters * Darlington replacement * Telecoms hook switch and earth recall switch