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VUE75-12NO7, VUI30-12N1, VUI72-16NO1

VUE75-12NO7, VUI30-12N1, VUI72-16NO1 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-200AB  D/C:2009

VUE75-12NO7, VUI30-12N1, VUI72-16NO1 Picture

VUE75-12NO7, VUI30-12N1, VUI72-16NO1 Datasheet download

Five Points

Part Number: VUE75-12NO7

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-200AB

D/C: 2009

Description: RECT MODULE PFC 3PH 1200V V1-A

 

 
 
 
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VUE75-12NO7 Suppliers

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About VUE75-12NO7

PDF/DataSheet Download

Datasheet: VUE75-12NO7

File Size: 198709 KB

Manufacturer: IXYS [IXYS Corporation]

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VUI30-12N1 Suppliers

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About VUI30-12N1

PDF/DataSheet Download

Datasheet: VUI30-12N1

File Size: 55770 KB

Manufacturer: IXYS [IXYS Corporation]

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About VUI30-12N1

PDF/DataSheet Download

Datasheet: VUI30-12N1

File Size: 55770 KB

Manufacturer: IXYS [IXYS Corporation]

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VUE75-12NO7 Parameters

Technical/Catalog InformationVUE75-12NO7
VendorIXYS
CategoryDiscrete Semiconductor Products
Diode Type Three Phase
Package / CaseECO-PAC1
PackagingBulk
Reverse Recovery Time (trr)40ns
SpeedFast Recovery =< 500ns, > 200mA (Io)
Current - DC Forward (If)74A
Voltage - Peak Reverse (Max)1200V
Mounting TypePCB
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VUE75 12NO7
VUE7512NO7

VUE75-12NO7 Maximum Ratings

Symbol Test Conditions Maximum Ratings
IdAV
IdAVM
TC = 85°C, module
74
90
A
A
IFSM TVJ = 45; t = 10 ms (50 Hz), sine
VR = 0 t = 8.3 ms (60 Hz), sine
200
220
A
A
TVJ = TVJM t = 10 ms (50 Hz), sine
VR = 0 t = 8.3 ms (60 Hz), sine
170
190
A
A
I2t TVJ = 45C t = 10 ms (50 Hz), sine
VR = 0 t = 8.3 ms (60 Hz), sine
200
205
A2s
A2s
TVJ = TVJM t = 10 ms (50 Hz), sine
VR = 0 t = 8.3 ms (60 Hz), sine
145
150
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125


VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
3000
3600
V~
V~
Md
Weight
Mounting torque (M4)
typ.
1.5-2/14-18 Nm/lb.in.
19 g
Nm
lb.in.
g

VUE75-12NO7 Features

• Package with DCB ceramic base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering

VUE75-12NO7 Typical Application

• Supplies for DC power equipment
• Input and output rectifiers for high frequency
• Battery DC power supplies
• Field supply for DC motors

VUI30-12N1 Parameters

Technical/Catalog InformationVUI30-12N1
VendorIXYS
CategoryDiscrete Semiconductor Products
Diode Type Three Phase - PFC Module
Package / CaseModule
PackagingBulk
Reverse Recovery Time (trr)400ns
SpeedFast Recovery =< 500ns, > 200mA (Io)
Current - DC Forward (If)40A
Voltage - Peak Reverse (Max)1200V
Mounting TypePCB
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VUI30 12N1
VUI3012N1

VUI30-12N1 Maximum Ratings

Symbol
Conditions
Maximum Ratings
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
RBSOA; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
non-repetitive
1200 V
± 20 V
95 A
65 A
100 A
VCES
10 µs

VUI30-12N1 Features

• NPT IGBT with low saturation voltage
• fast recovery epitaxial diodes (FRED)
• module package:
  - high level of integration
  - solder terminals for PCB mounting
  - isolated DCB ceramic base plate
  - large creepage and strike distances

VUI30-12N1 Typical Application

• input from three phase mains
  - wide range of input voltage
  - mains currents approximately sinusoidal in phase with mains voltage
  - topology permits to control overcurrent such as in case of input voltage peaks
• output
  - direct current link
  - buck type converter  
  - reduced output voltage
  - possibility to supply boost converter, inverter etc.
• required components
  - one power semiconductor module per phase
  - one inductor and one capacitor per phase on mains side
  - output inductor, depending on supplied circuit

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