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VSML3710 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a PLCC-2 package for surface mounting (SMD).
VSML3710 Maximum Ratings
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 s
IFS
200
mA
Surge forward current
tp = 100 s
IFSM
1
A
Power dissipation
PV
160
mW
VSML3710 Features
• Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 60° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with IR emitter series VEMT3700 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
VSML3710 Typical Application
• IR emitter in photointerrupters, sensors and reflective sensors • IR emitter in low space applications • Household appliance • Tactile keyboards