VI30100SG, VI30120C, VI30120S Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-262AA D/C:2010+
VI30100SG, VI30120C, VI30120S Datasheet download
Part Number: VI30100SG
MFG: Vishay
Package Cooled: TO-262AA
D/C: 2010+
VI30100SG, VI30120C, VI30120S
- Table of contents:
Info of VI30100SG
Info of VI30120C
Info of VI30120S
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Datasheet:
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Manufacturer:
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VI30100SG General Description
V30100SG, VF30100SG, VB30100SG & VI30100SG datasheet
VI30100SG Maximum Ratings
| PARAMETER | SYMBOL |
V30100SG |
VF30100SG |
VB30100SG |
VI30100SG |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
100 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
30 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
250 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
- 40 to + 150 |
||||
VI30100SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VI30100SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VI30120C General Description
V30120C, VF30120C, VB30120C & VI30120C datasheet
VI30120S General Description
V30120S, VF30120S, VB30120S & VI30120S datasheet
VI30120S Maximum Ratings
| PARAMETER | SYMBOL | V30120S | VF30120S | VB30120S | VI30120S | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1) | IF(AV) | 30 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM | 300 | A | |||
| Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VI30120S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VI30120S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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