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• H-bridge with HiPerFETTM technology: - low RDSon - unclamped inductive switching(UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode - Kelvin source for easy drive - low inductive, symmetrical current paths • thermistor for internal temperature measurement • package: - high level of integration - only one power semiconductor module required for the whole primary side - solder terminals for PCB mounting - isolated DCB ceramic base plate
VBH40-05B Typical Application
primary side of mains supplied • welding converters • switched mode power supplies • induction heaters