V60120C, V60131, V60200PG Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-220AB D/C:2010+
V60120C, V60131, V60200PG Datasheet download
Part Number: V60120C
MFG: Vishay
Package Cooled: TO-220AB
D/C: 2010+
V60120C, V60131, V60200PG
- Table of contents:
Info of V60120C
Info of V60131
Info of V60200PG
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About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
About V600ME02
PDF/DataSheet Download
Datasheet: V600ME02
File Size: 58944 KB
Manufacturer: ZCOMM [Z-Communications, Inc]
Download : Click here to Download
V60120C General Description
V60120C datasheet
V60120C Maximum Ratings
| PARAMETER | SYMBOL | V60120C | UNIT | |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |
| Maximum average forward rectified current (Fig.1) |
per device | IF(AV) | 60 | A |
| per diode | 30 | |||
| Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode |
IFSM | 300 | ||
| Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz | IRRM | 1.0 | ||
| Voltage rate of change (rated VR) | dV/dt | 10000 | V/µs | |
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||
V60120C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V60120C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
V60200PG General Description
V60200PG datasheet
V60200PG Maximum Ratings
| PARAMETER | SYMBOL | V60200PG | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 200 | V |
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) | 60 30 |
A |
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM | 300 | A |
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 |
V60200PG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V60200PG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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