V500ME03-LF, V50100P, V50100P-E3/45 Selling Leads, Datasheet
MFG:Z-COMM Package Cooled:TO-247 D/C:08+
V500ME03-LF, V50100P, V50100P-E3/45 Datasheet download
Part Number: V500ME03-LF
MFG: Z-COMM
Package Cooled: TO-247
D/C: 08+
V500ME03-LF, V50100P, V50100P-E3/45
- Table of contents:
Info of V500ME03-LF
Info of V50100P
Info of V50100P-E3/45
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About V502AS32
PDF/DataSheet Download
Datasheet: V502AS32
File Size: 189207 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V502AS32
PDF/DataSheet Download
Datasheet: V502AS32
File Size: 189207 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V502AS32
PDF/DataSheet Download
Datasheet: V502AS32
File Size: 189207 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
V50100P General Description
V50100P datasheet
V50100P Maximum Ratings
|
PARAMETER |
SYMBOL |
V40100P |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
100 |
V |
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) |
50 25 |
A |
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
350 |
A |
| Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz |
IRRM |
1.0 |
A |
| Operating junction and storage temperature range |
TJ, TSTG |
- 40 to + 150 |
V50100P Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V50100P Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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