V20120S, V20120S-E3/4W, V20120SG Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-220AB D/C:2010+
V20120S, V20120S-E3/4W, V20120SG Datasheet download
Part Number: V20120S
MFG: Vishay
Package Cooled: TO-220AB
D/C: 2010+
V20120S, V20120S-E3/4W, V20120SG
- Table of contents:
Info of V20120S
Info of V20120S-E3/4W
Info of V20120SG
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About V200CH8
PDF/DataSheet Download
Datasheet: V200CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V200CH8
PDF/DataSheet Download
Datasheet: V200CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V200CH8
PDF/DataSheet Download
Datasheet: V200CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
V20120S General Description
V20120S, VF20120S, VB20120S & VI20120S datasheet
V20120S Maximum Ratings
| PARAMETER | SYMBOL | V20120S | VF20120S | VB20120S | VI20120S | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1) |
IF(AV) | 20 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 200 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
V20120S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V20120S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
V20120SG General Description
V20120SG, VF20120SG, VB20120SG & VI20120SG datasheet
V20120SG Maximum Ratings
| PARAMETER | SYMBOL | V20120SG | VF20120SG | VB20120SG | VI20120SG | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1) | IF(AV) | 20 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM | 150 | A | |||
| Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
V20120SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
V20120SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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