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UMZ12N, UMZ1N, UMZ1NT1

Table of contents:
Info of UMZ12N
Info of UMZ1N
Info of UMZ1NT1

UMZ12N, UMZ1N, UMZ1NT1 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-323 D/C:04+PB44300

UMZ12N, UMZ1N, UMZ1NT1 Datasheet download

Five Points

Part Number: UMZ1NT1

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: SOT-323

D/C: 04+PB44300

Description: TRANS AMP COMP DUAL GP SOT363

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UMZ12N Maximum Ratings

Parameter	Limits	SYMBOL	UNIT
Power dissipation*	150	P	mW
Junction temperature	150	Tj	°C
Range of storage temperature	−55~+150	Tstg	°C

UMZ12N Features

1) Small surface mounting type. (UMD3)
2) Multiple diodes with common anode configuration.
3) High reliability.

UMZ12N Typical Application

Constant voltage control
Noise suppression on single line

UMZ1N Features

· Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package.
· Mounting possible with UMT3 or SMT3 automatic mounting machines.
· Transistor elements are independent, eliminating interference.
· Mounting cost and area can be cut in half.

UMZ1NT1 Parameters

Technical/Catalog Information	UMZ1NT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	200mA
Power - Max	385mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	114MHz
Current - Collector Cutoff (Max)	2A
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	UMZ1NT1 UMZ1NT1 UMZ1NT1OS ND UMZ1NT1OSND UMZ1NT1OS

UMZ1NT1 Maximum Ratings

Rating	Symbol	Value	Unit
Collector−Base Voltage	V_(BR)CBO	60	Vdc
Collector−Emitter Voltage	V_(BR)CEO	50	Vdc
Emitter−Base Voltage	V_(BR)EBO	7.0	Vdc
Collector Current − Continuous	I_C	200	mAdc

UMZ1NT1 Features

• High Voltage and High Current: V_CEO = 50 V, I_C = 200 mA
• High h_FE: h_FE = 200400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A ESD Rating − Machine Model: C

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