UF808F, UF830, UF840 Selling Leads, Datasheet
MFG:PANJIT Package Cooled:ITO-220AC D/C:06+
UF808F, UF830, UF840 Datasheet download
Part Number: UF808F
MFG: PANJIT
Package Cooled: ITO-220AC
D/C: 06+
UF808F, UF830, UF840
- Table of contents:
Info of UF808F
Info of UF830
Info of UF840
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About UF808F
PDF/DataSheet Download
Datasheet: UF808F
File Size: 48927 KB
Manufacturer: WTE [Won-Top Electronics]
Download : Click here to Download
About UF830
PDF/DataSheet Download
Datasheet: UF830
File Size: 124627 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About UF840
PDF/DataSheet Download
Datasheet: UF840
File Size: 124627 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
UF808F Maximum Ratings
| Characteristic |
Symbol |
UF800F |
UF801F |
UF802F |
UF803F |
UF804F |
UF806F |
UF808F |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
V |
| RMS Reverse Voltage |
VR(RMS) |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
V |
| Average Rectified Output Current @TA = 100°C |
IO |
8.0 |
A | ||||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
125 |
A | ||||||
| Forward Voltage (per element) @IF = 8.0A |
VFM |
1.0 |
1.3 |
1.7 |
V | ||||
| Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C |
IRM |
10 500 |
A | ||||||
| Reverse Recovery Time (Note 1) |
trr |
50 |
100 |
nS | |||||
| Typical Junction Capacitance (Note 1) |
Cj |
80 |
50 |
pF | |||||
| Operating and Storage Temperature Range |
Tj, TSTG |
-65 to +150 |
°C | ||||||
UF808F Features
Glass Passivated Die Construction
Ultra-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
Ultra-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
UF808F Connection Diagram
/uploadfile/ic-mfg/360/Fig.8.jpg
UF840 General Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF840 Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit | |
| Drain-Source Voltage(TJ =25~125) |
VDSS |
500 |
V | |
| Gate-Source Voltage(RGS = 20k,TJ =25~125) |
VDGR |
500 |
V | |
| Gate to Source Voltage |
VGS |
±20 |
V | |
| Drain Current | Continuous |
ID
|
8.0 |
A |
|
A | ||||
| Tc =100 |
5.1 |
A | ||
| Pulsed |
IDM |
32 |
A | |
| Maximum Power Dissipation(Ta = 25) Derating above 25 |
PD |
125 |
W | |
|
1.0 |
W/ | |||
| Single Pulse Avalanche Energy Rating (VDD=50V, starting TJ =25, L=14mH, RG=25, peak IAS =8A) |
EAS |
510 |
mJ | |
| Operating Temperature Range |
TOPR |
-55 ~ +150 |
||
| Storage Temperature Range |
TSTG |
-55 ~ +150 |
||
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
UF840 Features
`8A, 500V, Low RDS(ON)(0.85)
` Single Pulse Avalanche Energy Rated
` Rugged - SOA is Power Dissipation Limited
` Fast Switching Speeds
`Linear Transfer Characteristics
` High Input Impedance
` Single Pulse Avalanche Energy Rated
` Rugged - SOA is Power Dissipation Limited
` Fast Switching Speeds
`Linear Transfer Characteristics
` High Input Impedance
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